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    首頁> 外文會議>Unmanned/Unattended Sensors and Sensor Networks II >1550 nm surface normal electroabsorption modulators for free space optical communications
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    1550 nm surface normal electroabsorption modulators for free space optical communications

    機譯:1550 nm表面正常電吸收調制器,用于自由空間光通信

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    摘要

    We report on the design, fabrication and characterization of 1550 nm electroabsorption modulators based on InGaAs/InAlAs coupled quantum wells grown on InP substrate by MBE. Large and small single modulators and modulator arrays have been fabricated on a wafer scale with an optimized device fabrication technology. The modulator size, shape, contact arrangements, and the array configurations have been varied to achieve suitable device performance for different retro-reflective free-space optical communication links. The device electrical and optical properties have been characterized by Ⅰ-Ⅴ, photoluminescence, absorption, transmittance and reflectance measurements. Modulators exhibit contrast ratios of 2:1 at a 3V driving bias and contrast ratios of 2:1 over a 30 nm bandwidth at 6V. A maximum contrast ratio of 4:1 is obtained at a 12V driving voltage.
    機譯:我們報道了基于MBE在InP襯底上生長的InGaAs / InAlAs耦合量子阱的1550 nm電吸收調制器的設計,制造和表征。大型和小型單個調制器和調制器陣列已通過優化的器件制造技術以晶圓級制造。調制器的尺寸,形狀,觸點布置和陣列配置已進行了更改,以針對不同的回射自由空間光通信鏈路實現合適的設備性能。通過Ⅰ-Ⅴ,光致發光,吸收,透射率和反射率的測量來表征該器件的電學和光學性能。調制器在3V的驅動偏置下顯示出2:1的對比度,在6V的30nm帶寬上顯示出2:1的對比度。在12V驅動電壓下可獲得4:1的最大對比度。

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